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| GaAs MMIC Power Amplifier, 2 W, 14.0 - 14.5 GHz Features * * * * * * * High Linear Gain: 22 dB Typical. High Saturated Output Power: +33 dBm Typical High Power Added Efficiency: 22% Typical High P1dB: +32 dBm Typical 50 Input / Output Broadband Matched Integrated Output Power Detector High Performance Ceramic Bolt Down Package AM42-0007-DIE V4 Functional Schematic Description M/A-COM's AM42-0007-DIE is a three stage MMIC linear power amplifier fabricated on a mature 0.5 micron MBE based GaAs process. The AM42-0007DIE employs a fully matched chip with integral bias networks and output power detector. This GaAs MMIC power amplifier is ideally suited for used as an output stage or driver in applications for VSAT applications. Ordering Information Part Number AM42-0007-DIE Package DIE Typical Bias Configuration 3,4 Absolute Maximum Ratings 1,2 Parameter VDD VGG Power Dissipation RF Input Power ChannelTemperature Storage Temperature Absolute Maximum +12 Volts -10 Volts 17.9 W +23 dBm +150 C -65 C to +150 C 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. Back of die temperature (TB) = +25C. 3. Nominal bias is obtained by first connecting -5 volts to pin VGG (resistor network used) followed by connecting +9 volts to pin VDD. Note sequence. 4. It is recommended that the die be mounted with Au/Sn eutectic performs for good RF ground and thermal interface. 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. GaAs MMIC Power Amplifier, 2 W, 14.0 - 14.5 GHz Electrical Specifications 5: TB = +25C , VDD = +9 V, VGG = -1.2V, Z0 = 50 Parameter Linear Gain Input VSWR Output VSWR Saturated Output Power Output Power @ 1dB Compression Output IP3 Power Added Efficiency (PAE) Bias Current Thermal Resistance Detector Output Voltage (VDET) PIN < +14 dBm IDSQ (No RF) IGG (No RF) AM42-0007-DIE V4 Test Conditions PIN < 0 dBm -- -- PIN < +14 dBm Units dB Ratio Ratio dBm dBm dBm % mA mA C/W V Min. -- -- -- -- 31 -- -- -- -- -- -- Typ. 22 2.5:1 2.7:1 +33 +32 41 22 850 0.1 7 +3.5 Max. -- -- -- -- -- -- -- -- -- -- -- CB2 6 Pin = +3 dBm, Ids = 750 mA Typ. 5. 100% on wafer tested (50 s pulse width, 20% duty factor) without resistor network on gates. 6. Channel to die backside. Typical Performance @ 25C 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. |
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